STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 1 description the STN9926AA is the dual n-channel logic enhancement mode po wer field effect transistors are produced using high ce ll density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , notebook computer li-ion battery , power management and other battery powered circuits where high-side switching . pin configuration sop-8 part marking sop-8 ordering information part number package part marking STN9926AAs8rg sop-8 stn9926 STN9926AAs8tg sop-8 stn9926 process code : a ~ z ; a ~ z STN9926AAs8rg s8 : sop-8 ; r : tape reel ; g : pb ? free STN9926AAs8tg s8 : sop-8 ; t : tube ; g : pb ? free feature z 20v/6.0a, r ds(on) = 30m @vgs = 4.5v z 20v/5.0a, r ds(on) = 42m @vgs = 2.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sop-8 package design
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 2 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d 6.0 5.0 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 2.8 1.8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 105 /w
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 3 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 0.6 1.2 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss t j =55 v ds =20v,v gs =0v 5 ua on-state drain current i d(on) v ds Q 5v,v gs =4.5v 6 a drain-source on-resistance r ds(on) v gs = 4.5v, i d =6.0a v gs =2 .5v, i d =5.0a 0.024 0.032 0.030 0.042 forward tran conductance g fs v ds =5.0v,i d =3.6a 10 s diode forward voltage v sd i s =1.7a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 2.0 gate-source charge q gs 2.5 gate-drain charge q gd v ds =10v,v gs =4.5v i d ? 6.0a 2.1 nc input capacitance ciss 565 output capacitance coss 84 reverse transfercapacitance crss vds=8.0v,vgs=0v f=1mhz 22 pf 10 14 turn-on time t d(on) tr 16 20 33 40 turn-off time t d(off) tf v dd =10v,r l =6 i d =1a,v gen =4.5v r g =6 3 10 ns
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 4 typical characterictics (25 unless note)
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 5 typical characterictics (25 unless note)
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 6 typical characterictics (25 unless note)
STN9926AA dua l n channel enhancement mode mosfet 6.0a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN9926AA 2007. v1 7 sop-8 package outline
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